Electronic structure of the valence band of the II--VI wide band gap binary/ternary alloy interfaces

摘要

We present an electronic structure calculation of the valence band for someII--VI binary/ternary alloy interfaces. We use the empirical tight-bindingmethod and the surface Green's function matching method. For the ternary alloyswe use our previously set Hamiltonians they describe well the band gap changewith composition obtained experimentally. At the interface domain, we findthree non-dispersive and two interface states besides the known bulk bands. Thenon-dispersive states are reminiscent of the ones already obtainedexperimentally as well as theoretically, in (001)-oriented surfaces. We makeuse of the available theoretical calculations for the (001)-oriented surfacesof the binary compounds and for the binary/binary interfaces to compare our newresults with.